New-Tech Europe Magazine | H2 2023

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EliteSiC intelligent power solutions into its eDrive systems. By integrating onsemi’s industry-leading EliteSiC MOSFET technology, Magna eDrive systems can offer better cooling performance and faster acceleration and charging rates, improving efficiency and increasing the range of electric vehicles (EVs). Additionally, onsemi’s end-to-end silicon carbide (SiC) manufacturing capability, combined with its ability to ramp production quickly, improves Magna’s vertical integration and simplifies its supply chain to meet the growing demand for its SiC-based products for EVs. “With range anxiety still a top deterrent to EV adoption, our technology enables Magna to go further, easing the transition to an electrified future,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Our latest EliteSiC MOSFET technology enables increased power density and higher efficiency in traction inverters, resulting in improved gas-equivalent miles per gallon without compromising driving dynamics and safety.” Simultaneous with the signing of the LTSA, the companies

entered a separate agreement for Magna to also invest approximately $40 million for the procurement of new SiC equipment at onsemi’s New Hampshire and Czech Republic facilities to ensure access to future supply. “We believe that a secure supply of silicon carbide chips will be critical to our ability to continue delivering innovative and efficient eDrive systems for our customers,” said Diba Ilunga, president Magna Powertrain. “Accordingly, we are both investing to grow SiC production capacity, and establishing the commercial basis for long-term supply of SiC-based chips to advance our electrification strategy and outpace the competition.” Silicon carbide is a wide bandgap semiconductor substrate that is ideal for high-temperature, high-power applications such as electric vehicles, but it is incredibly difficult to produce. With a limited number of manufacturers and significant demand for SiC-based designs, OEMs and automotive suppliers are increasingly looking to secure long term, reliable supply.

Analog Devices Invests More Than $1 Billion in Semiconductor Facility Expansion in Oregon

Analog Devices, Inc. (Nasdaq: ADI), a global semiconductor leader, celebrated its more than $1 billion investment to expand its semiconductor wafer fab in Beaverton, Oregon. The Beaverton site, built in 1978, is ADI’s largest wafer fabrication facility by volume and serves customers in critical industries, such as industrial, automotive, communications, consumer, and healthcare.

nearly doubling production output, the facility is targeting to reduce absolute greenhouse gas emissions by approximately 75% and water usage per production unit by approximately 50%.

“By expanding ADI’s Beaverton facility, we are increasing our production capacity in critical industries, boosting domestic manufacturing in line with the vision of the CHIPS Act, and enhancing the global resiliency of ADI’s

Credit: Analog Devices

hybrid manufacturing model,” said Vincent Roche, ADI’s CEO and Chair. “While our investment in Beaverton will facilitate these goals, they will be achieved through the incredible dedication and talent of ADI’s existing workforce and further tapping into Oregon’s strong talent pool.” Commenting on the announcement, U.S. Senator Ron Wyden of Oregon said, “Today’s good news from Analog Devices marks a significant step to ensure Oregon is taking full advantage of the federal CHIPS Act I worked to pass

The facility investment expands cleanroom space to about 118,000 sq-ft and nearly doubles internal manufacturing of products running on the 180-nanometer technology node and above. It is also expected to create hundreds of new, long term employment opportunities, a significant increase to ADI’s current roughly 950 employees in Oregon. More than 10% of the total investment is for new, state-of-the art fab tools intended to increase overall efficiency and utilize chemistries that are more environmentally friendly. Despite

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