New-Tech Europe Magazine | Q4-2020 | Digital Edition

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to access hard to reach measurement points that were previously inaccessible. Additionally, the separate controller box has been condensed and is now self- contained inside the probe’s compensation box. Improved sensitivity – The new probes are more sensitive, with less noise at +/- 50V measurements for greater visibility and voltage sensitivity in wide bandgap measurements. Greater accuracy – The new probe offers enhanced accuracy in a number of areas including improved DC accuracy, enhanced gain accuracy over the full input range and improved temperature drift correction. These enhancements enable deeper characterization of wide bandgap designs for increased energy efficiency. Less tip swapping – With wider dynamic range at the sensor head, fewer tips are required to cover the same voltage range as IsoVu Gen 1. This shortens the time needed to perform device testing, eliminates potential errors when swapping tips, and lowers the cost for customers that needed to purchase multiple tips on IsoVu Gen 1. “IsoVu technology has been critical in our support of customers adopting our Power Conversion technology in their designs,” says Cam Pham, Global Automotive Field Application Engineer Leader, Wolfspeed, a Cree Company. “With its galvanic isolation capability, IsoVu technology enables us and customers to accurately characterize high side events with confidence.” Availability and Pricing The TIVP Series probes are now available worldwide in bandwidths ranging from 200 MHz to 1 GHz and are priced from $9,000 USD. For more information go to https://www.tek.com/isolated-measurement-systems.

Microchip Releases Newest Generation of AEC-Q101 Qualified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diode (SBD) for Automotive Applications Automotive Electronics Council (AEC)-Q101- qualified devices targeted at helping electric vehicles achieve the highest levels of reliability and ruggedness As vehicle electrification continues rapid growth worldwide, innovative power technologies such as Silicon Carbide (SiC) are required for high-voltage automotive systems ranging from motors to on-board charging and DC/DC converters. Microchip Technology Inc. announced its newly-qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices, providing Electric Vehicle (EV) system designers with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options. For EV power designers who need to increase system efficiency while maintaining high quality, Microchip’s AEC-Q101-qualified devices maximize system reliability and ruggedness and enable stable and lasting application life. The devices’ superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity. “As a long-time supplier to the automotive industry, Microchip’s continued expansion of automotive-capable power solutions is leading the transformation of power systems in vehicle electrification,” said Leon Gross, vice president of Microchip’s discrete product business unit. “Our focus is to provide automotive solutions that help our clients easily transition to SiC while minimizing the risk of quality, supply and support challenges.” Microchip has been a supplier to the automotive industry for more than 25 years. The company’s SiC technology, as well as its multiple IATF 16949:2016-certified fabrication facilities, provide high-quality devices through flexible manufacturing alternatives, helping minimize risk in the supply chain. Through Microchip internal and third-party testing, critical reliability metrics have proven Microchip devices’ superior performance when compared to other SiC

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