New-Tech Europe Digital Magazine | May 2016

new products

average RF output power of 71 W (450 W peak), gain of 16.5 dB, and drain efficiency of 46% in concurrent multiband operation at 8 dB back- off configured. The part is housed in a NI-400S-2S air-cavity ceramic package. A2G26H281-04S: NXP’s first in- package Doherty transistor covering 2496 to 2690 MHz, with average RF output power of 50 W (288 W peak), gain of 15.3 dB, and drain efficiency of 57% configured in a NI-780S-4L air-cavity ceramic package. A2G35S160-01S and A2G35S200- 01S: Two-transistor Doherty amplifier solution covering 3400 to 3600 MHz with 53 W average RF output power (331 W peak), gain of 13.8 dB, and drain efficiency of 46%. Each of these transistors is housed in a NI-400S-2S air-cavity ceramic package. “Cellular customers are actively pursuing GaN technology especially in higher frequency bands. Given its leadership in the cellular base station market, NXP is committed to being a dominant source of top- quality GaN products,” said Paul Hart, executive vice president and general manager of NXP’s RF power business unit. “Our new transistors fully harness the inherent strengths of GaN enabling broad bandwidth, efficient and compact solutions.”

deployment of IoT devices and solutions.OurAX-SFultra-lowpower sub GHz solution gives developers robust and reliable two-way connectivity to the SIGFOX global network,” said Ryan Cameron, Vice President and General Manager of the industrial and timing division at ON Semiconductor. “Meanwhile for the LAN environment, our industry leading 802.15.4 platform based on the NCS36510 now provides users access to theARMmbed ecosystem coupled with the benefits of Thread for security and interoperability. SIGFOX, in combination with Thread, also has great potential for use cases where multiple connectivity solutions can be mixed to create new user experiences. To learn more about ON Semiconductor’s expertise in IoT technology you can attend a series of presentations that company representatives will be giving at IoT World (10th – 12th May, Santa Clara Convention Center, Santa Clara, CA).

announced an expansion to its portfolioof 48VGalliumNitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies. With thewirelessspectrumshortage, wireless carriers are exploring higher frequencies to accommodate the exponential annual increases in traffic. These networks require RF power transistors and amplifiers that deliver higher performance over wider signal bandwidths, as well as higher efficiency and ruggedness, higher output power and smaller footprints. The four new NXP GaN transistors are specifically designed to meet these challenges. The transistors have high efficiency and gain, and are extremely rugged, with the ability to deliver their rated performance with an impedance mismatch (VSWR) greater than 10:1. These transistors, designed for use in Doherty power amplifiers, are optimized for seamless integration with digital predistortion linearization systems. The new products introduced today are: A2G22S251-01S: Ultra wideband symmetrical Doherty two device solution covering 1805 to 2170 MHz (365 MHz bandwidth). In a symmetric Doherty, it delivers an

NXP Introduces New High Performance GaN RF Power Transistors for Cellular Base Stations NXP Semiconductors N.V.(NASDAQ:NXPI), today

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