August_EDFA_Digital

1

DEPARTMENTS 2 GUEST EDITORIAL Ian A. Young 34 SPECIAL ISTFA PREVIEW Felix Beaudoin 36 ISTFA EXHIBITORS LIST 38 2019 PHOTO CONTEST 39 2019 VIDEO CONTEST 40 DIRECTORY OF FA PROVIDERS Rose Ring 42 PRODUCT NEWS Ted Kolasa Failure analysis without a transmission electron micro- scope (TEM) has become almost unthinkable in modern semiconductor manufacturing. This article reviews recent advances that transformed the TEM from a pure imaging tool into a versatile instrument for physical and composi- tional characterization. Large Area Automated Deprocessing of Integrated Circuits: Present and Future E.I. Principe, Z.E. Russell, S.T. DiDona, M. Therezien, B.W. Kempshall, K.E. Scammon, and J.J. Hagen Recent achievements and present limitations of large area automated deprocessing of integrated circuits are discussed in this article. It also describes future integrated circuit deprocessing tool development related to purpose- built laboratory-based hardware and synchrotron-based instrumentation. Failure Analysis for Hardware Assurance and Security M. Tanjidur Rahman and Navid Asadizanjani This article presents a comprehensive study of different physical inspection/attacks, the prospect and challenges of physical inspection methods as an emerging trust verification tool, and the dire threat imposed by physical attacks on systems on chip. This article shows that galliumfocused ionbeam(FIB) with the same chemistry as Xe FIB can performdelayering on a sub-14 nm technology microprocessor and discusses the differences between the two use cases. Xe Plasma vs. Gallium FIB Delayering Sharang Sharang, Paul Anzalone, and Jozef Vincenc Obona edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS Recent Advances in VLSI Characterization using the TEM Frieder H. Baumann A RESOURCE FOR TECHNICAL INFORMATION AND INDUSTRY DEVELOPMENTS AUGUST 2019 | VOLUME 21 | ISSUE 3 16 26 4 8

ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 3

4

8

16

26

ABOUT THE COVER Writing in a Moonlit Wonderland. Excessive strain during field oxidation created Si defects, causing diode leakage. b = ±a[111]/3 for the nanometer-size stacking fault (SF). (004)-DFTEM revealed the SF fringes and bounding disloca- tions. With g = ( − 220), the fringes and dislocations along [ − 110] were rendered invisible (oval inset). Can you find the nano-tablet? Photo by Wentao Qin, ON Semiconductor, First PlaceWinner in False Color Images, 2018 EDFAS Photo Contest. Author Guidelines Author guidelines and a sample article are available at edfas.org. Potential authors should consult the guidelines for useful informa- tion prior to manuscript preparation.

For the digital edition, log in to edfas.org, click on the “News/Magazines” tab, and select “EDFA Magazine.”

44 TRAINING CALENDAR Rose Ring 48 LITERATURE REVIEW Mike Bruce 48 IN MEMORIAM 50 UNIVERSITY HIGHLIGHT Norhayati Soin, et al.

51 IRPS WRAP-UP David Burgess 54 GUEST COLUMN Tejinder Gandhi 56 ADVERTISERS INDEX

edfas.org