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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 3 48 Michael R. Bruce, Consultant mike.bruce@earthlink.net

LITERATURE REVIEW

Peer-Reviewed Literature of Interest to Failure Analysis: Thermography and Thermal-Related Phenomena

T his column covers peer-reviewed articles published since 2016 on thermography and thermal-related phenomena. Note that inclusion in this list does not vouch for the article’s quality and category sorting is by no means strict. If youwish to share an interesting, recently published peer-reviewed articlewith the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic.

• TS. Arakelyan, H. Lee, Y. Jeong, et al.: “Direct Imaging of the SSD and USB Memory Drives Heating by Thermo-Elastic Optical Indicator Microscopy,” Case Studies in Thermal Engineering, 2017, 10, p 407. • J.YBae,K-SLee,H.Hur,etal.: “3DDefectLocalizationon Exothermic Faults within Multi-Layered Structures Using Lock-In Thermography: An Experimental and Numerical Approach,” Sensors, 2017, 17, p 2331. • O. BreitensteinandD. Sontag: “Lock-InThermography Based Local Solar Cell Analysis for High Efficiency Monocrystalline Hetero Junction Type Solar Cells,” Sol. Energy Mater. Sol. Cells, 2019, 193, p 157. • O. Breitenstein, H. Straube, and K. Iwig: “Lock-In Thermography with Depth Resolution on Silicon Solar Cells,” Sol. Energy Mater. Sol. Cells, 2018, 185, p 66. • J. Dallas, G. Pavlidis, B. Chatterjee, et al.: “Thermal Characterization of Gallium Nitride p-i-n Diodes [Comparing Infrared Thermography, Thermo- reflectance Thermal Imaging, and Raman Ther- mometry],” Appl. Phys. Lett., 2018, 112, p 073503. • D. Daniel, A Mosyak, R. Akhvlediani, et al.: “Enhanced Cooling of Electronic Chips using Combined Diamond Coating and Microfluidics,” Phys. Rev. Applied, 2019, 11, p 014047. • K. Endo, Y. Midoh, T. Nakamura, et al.: “Thermal Behavior Analysis of Interconnect Structures of Si Semiconductor Devices using the Temperature Dependent Reflectance of an Incoherent Light Beam,” Jpn. J. App. Phys., 2018, 57, p 07ME02. • F. Frühauf and O. Breitenstein: “DLIT- Versus ILIT- Based Efficiency Imaging of Solar Cells,” Sol. Energy Mater. Sol. Cells, 2017, 169, p 195.

• X. Hu, P. Yasaei, and J. Jokisaari: “Mapping Thermal ExpansionCoefficients in Freestanding 2DMaterials at the Nanometer Scale [using STEM],” Phys. Rev. Lett., 2018, 120, p 055902; also seeM. Schirber: “Focus: Taking Temperature in 2D,” Physics, 2018, 11, p 12. • A.K. Jha, C. Li, K.P. Pipe, et al.: “Thermoreflectance Imaging of Back-Irradiance Heating in High Power Diode Lasers at Several Operating Wavelengths,” IEEE J. Sel. Topics Quantum Electron., 2019, 25, p 1-13. • K. Kijkanjanapaiboon, M. Xie, J. Zhou, et al.: “Inves- tigation of Dimensional and Heat Source Effects in Lock-In Thermography Applications in Semi- conductor Packages,” Appl. Therm. Eng., 2017, 113, p 673. • J. Klaers: “Landauer’s Erasure Principle in a Squeezed Thermal Memory [to Reduce Heating during Bit Operations],” Phys. Rev. Lett., 2019, 122, p 040602; also see M. Schirber: “Focus: A Cooler Computer,” Physics, 2019, 12, p 9. • C. Li, K.P. Pipe, C. Cao, et al.: “Thermal [Reflectance] Imaging of High Power Diode Lasers Subject to Back-Irradiance,” Appl. Phys. Lett., 2018, 112, p 101101. • A. Lis, S. Kicin, F. Brem, et al.: “Thermal Stress Assessment for Transient Liquid-Phase Bonded Si Chips in High-Power Modules using Experimental and Numerical Methods,” J. Electron. Mater., 2017, 46, p 729. • O.S. Lumbroso, L. Simine, A. Nitzan, et al.: “Electronic Noise due to Temperature Differences in Atomic- Scale Junctions,” Nature, 2018, 562, p 240; also see T. Wogan: “New Type of Noise Found Lurking in NanoscaleDevices,” 12Oct 2018 (https://physicsworld.

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