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Abstracts

P1.18

Theoretical and experimental study of properties of HoFe

6

Al

6

-H

single

crystals with a magnetic compensation point at temperatures near

absolute zero

I.S. Tereshina(1), A.K. Zvezdin(2,3), A.V. Andreev(4), J. ˇSebek(4), M.D.

Davidova(3), D.I. Gorbunov(5), E.A. Tereshina(4), Ch. Sabdenov(3), Y.

Skourski(5)

1) Lomonosov Moscow State University, Faculty of Physics, 119991 Moscow,

Russia

2) A. M. Prokhorov General Physics Institute of Russian Academy of Sciences,

119991 Moscow, Russia

3) Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia

4) Institute of Physics, Czech Academy of Sciences, 182 21 Prague, Czech

Republic

5) Dresden High Magnetic Field Laboratory (HLD-EMFL), Helmholtz-Zentrum

Dresden-Rossendorf, D-01314 Dresden, Germany

Ferrimagnetic HoFe

6

Al

6

(tetragonal ThMn

12

-type crystal structure) has a

compensation point for the Ho and Fe magnetic sublattices at temperatures

near absolute zero. The influence of hydrogen addition on the magnetism of a

HoFe

6

Al

6

is studied. Hydrogenation increases the Fe sublattice magnetic moment

from 10 to 10.45

µ

B as a result of volume expansion and thus, decompensates

Fe and Ho sublattices. H-T phase diagrams and a full magnetization process of

the HoFe

6

Al

6

Hx (x = 0; 1) single crystals are obtained theoretically by using a

single-ion model for the crystal-electric-field interaction and a mean-field model

for exchange interaction. Experimental study is carried out in fields up to 60 T.

P1.19

Comparison of Critical Current Scaling Behaviors in MgB2/SiC/Si

thin films

Akihiko Nishida(1), Chihiro Taka(1), Stefan Chromik(2), Rudolf Durny(3)

1) Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma,

Jonan-ku Fukuoka 814-0180, Japan

2) Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska

cesta 9, 841 04 Bratislava, Slovak Republic

3) Department of Physics, Slovak University of Technology, Ilkovicova 3, 812 19

Bratislava, Slovak Republic

Scaling behaviors of critical current density Jc in MgB2 thin films are

investigated on different films with thickness of 100nm, 50nm and 10nm based

on comprehensive scaling formula. Experimental data are reduced and analyzed

with the formula over a wide range of magnitudes. In 100nm and 50nm films

single scaling function has been able to fit experimental Jc data oven ten orders

of magnitudes with appropriate flux pinning parameters. On the other hand, for

the 10nm film, we find different Jc dependences on temperature and magnetic

field, suggesting anomalous or low dimensional superconductivity.

31