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new products
70 l New-Tech Magazine
Creepage package targets open
frame power supplies such as TV
adapters where dust can enter the
case through air vents. These dust
particles can reduce the effective
creepage between pins over time
which may lead to high voltage
arcing. The new TO-220 FullPAK
Wide Creepage package comes
with a pin distance of 4.25 mm
instead of the prevailing 2.54 mm
found in a standard TO-220 FullPAK
package.
The other outer dimensions of the
new package are almost identical
to the TO-220 FullPAK. Additionally,
the new Wide Creepage package
shows all the well-known benefits of
a standard FullPAK, predominantly
its excellent isolation behavior as
well as the assembly automation
ability.
Availability
TheTO-220FullPAKWideCreepage
package is available now. For
further information: www.infineon.
com/TO220-FP-widecreepage.
Revolutionize high-
performance power
conversion with TI’s 600-V
GaN FET power stage
Building on decades of power-
management innovation, Texas
Instruments (TI) (NASDAQ: TXN)
today announced the availability
of 600-V gallium nitride (GaN)
70-mΩ
field-effect
transistor
(FET) power-stage engineering
samples, making TI the first and
only semiconductor manufacturer
to publicly offer a high-voltage
driver-integrated GaN solution.
The new 12-A LMG3410 power
stage coupled with TI’s analog and
digital power-conversion controllers
enables designers to create
smaller, more efficient and higher-
performing designs compared to
silicon FET-based solutions. These
benefits are especially important
in isolated high-voltage industrial,
telecom, enterprise computing and
renewable energy applications.
For more details, see
www.ti.com/lmg3410-pr-eu .
“With over 3million hours of reliability
testing, the LMG3410 gives power
designers the confidence to
realize the potential of GaN and
to rethink their power architecture
and systems in ways not feasible
before,” said Steve Lambouses,
TI vice president of high-voltage
power solutions. “Expanding on
TI’s reputation for manufacturing
capability and extensive system-
design expertise, the new power
stage is a significant step for the
GaN market.”
With its integrateddriverand features
such as zero reverse-recovery
current, the LMG3410 provides
reliable performance, especially in
hard-switching applications where
it can dramatically reduce switching
losses by as much as 80 percent.
Unlike stand-alone GaN FETs, the
easy-to-use LMG3410 integrates
built-in intelligence for temperature,
current and undervoltage lockout
(UVLO) fault protection.
Proven
manufacturing
and
packaging expertise
The LMG3410 is the first
semiconductor integrated circuit (IC)
to include GaN FETs manufactured
by TI. Building on years of expertise
in manufacturing and process
technologies, TI creates its GaN
devices in a silicon-compatible
factoryand qualifies them with
practices that are beyond the typical
Joint Electron Device Engineering
Council (JEDEC) standards to
ensure the reliability and robustness
of GaN for demanding use cases.
Easy-to-use packaging will help
increase the adoption of GaN power
designs in applications such as
power factor controller (PFC) AC/
DC converters, high-voltage DC
bus converters and photovoltaic
(PV) inverters.
Key features and benefits of the
LMG3410
Double the power density. The 600-
V power stage delivers 50 percent
lower power losses in a totem-pole
PFC compared with state-of-the-art
silicon-based boost power-factor
converters. The reduced bill of
materials (BOM) count and higher
efficiency enable a reduction in
power-supply size of as much as 50
percent.
Reduced
packaging
parasitic
inductance. The new device’s
8-mm-by-8-mm quad flat no-lead
(QFN) package decreases power
loss, component voltage stress
and electromagnetic interference
(EMI) compared to discrete GaN
solutions.
Enables new topologies. GaN’s zero
reverse-recovery charge benefits
new switching topologies, including
totem-pole PFC and LLC topologies
to increase power density and
efficiency.
Expanding the GaN ecosystem
To support designers who are taking
advantage of GaN technology
in their power designs, TI is also
introducing new products to