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LETI AND FRAUNHOFER TEAM UP TO STRENGTHEN

MICROELECTRONICS INNOVATION IN FRANCE AND GERMANY

Two leading European research institutes

today announced their new collaboration

to develop innovative, next-generation

microelectronics technologies to spur

innovation in their countries and

strengthen European strategic and

economic sovereignty.

Leti, a research institute of CEA Tech

in Grenoble, France, and the Berlin-

based Fraunhofer Group for Microelectronics, Europe’s largest

R&D provider of smart systems, will initially focus on extending

CMOS and More-than-Moore technologies to enable next-

generation components for applications in the Internet of

Things, augmented reality, automotive, health, aeronautics and

other sectors, as well as systems to support French and German

industries.

The agreement was signed today by Leti CEO Marie Semaria

and Fraunhofer Group for Microelectronics Chairman Hubert

Lakner during Leti Innovation Days, which are marking Leti’s

50th anniversary.

“The ability to, one, develop key enabling technologies that

overcome the formidable technical challenges that our leading

technology companies will face, and, two, transfer them quickly

to industry, is an essential focus for research institutes and

industrials in France and Germany,” Semaria said. “Building on

our previous, successful collaborations, Leti and the Fraunhofer

Group for Microelectronics will bring our complementary

strengths to the task of keeping

France and Germany’s microelectronics

industries in the forefront – and offer our

innovations across Europe.”

“Micro-/nanoelectronics and smart

systems are key enabling technologies

for the economic success of Europe,

especially in France and Germany. Thus,

Europe can no longer afford to scatter its research competences.

For the benefit of industry, joining forces will become more and

more important, not only for industry but also for RTOs,” Lakner

explained. “The new cooperation agreement will be the starting

point for a strategic research cooperation of the two countries

in order to jointly support the upcoming EC initiative, Important

Project of Common European Interest (IPCEI), on micro- and

nanoelectronics.”

Specific R&D projects that the collaboration will focus on include:

Silicon-based technologies for next-generation CMOS processes

and products, including design, simulation, unit process and

material development as well as production techniques

Extended More than Moore technologies for sensing and

communication applications

Advanced-packaging technologies.

The second phase of the collaboration may be expanded with

additional academic partners and other countries, as needed.

memory experience, we’ve optimized the 3D NAND

floating gate architecture and manufacturing process.

Intel® 3D NAND technology is a floating gate architecture

that gives us the world’s best areal density today and

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synergy in our factories and expect a fast ramp of bit supply

based on 64-layer, TLC, 3D NAND by mid-2018.

Realizing the promise of the future is about bringing data

and compute closer together for a better experience.

14 l New-Tech Magazine Europe