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new products
as a monolithic switch. Compared to established smart
power switches in the DPAK package, the footprint of the
TSDSO-14 is 50 percent smaller. Compared to D²PAK, it is
80 percent smaller. The family enables very efficient driving
of high current loads. Also, it reduces power losses in control
modules up to 60 percent. With its optimized feature set for
12 V high current loads, including diagnosis and protection,
the family addresses a wide range of heating and power
distribution applications. These comprise glow plug controller,
PTC (Positive Temperature Coefficient) heater, starter relay,
horn, trailer node, and auxiliary power outlet.
Both families, PROFET+2 and High Current PROFET, are
pin-compatible and share the main feature set. Their on-state
resistance R DS(ON)scales from 2 mΩ to 200 mΩ. Their load
current sense accuracy (k ILIS) below 5 percent at a nominal
current is benchmark in the market. Their protection features
comprise current tripping, over temperature, overvoltage, load
dump and reverse battery capability ReverSave™. Infineon is
first in the market to implement reverse battery capability in
a monolithic chip. A further benchmark feature is a cranking
voltage capability able to work down to 3.1 V.
Alliance Memory Introduces New Die
Version for 2Gb and 4Gb DDR3 and DDR3L
SDRAMs; Provides New Memory Chip Source
in Face of Market Shortages
To address the memory market’s shortage of high-speed
CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance
Memory today announced a new die revision (B die) for its
2Gb and 4Gb devices in the 96-ball FBGA package.
“Market demand for DDR3 and DDR3L SDRAMs is
extremely high due to their increased functionality and
speed, but their availability is becoming more and more
limited as demand exceeds supply and suppliers move
capacity to Flash and other products,” said TJ Mueller,
Vice President of Marketing at Alliance Memory. “With
the introduction of a new B die version, we now have two
sources for our 2Gb and 4Gb parts’ silicon. This means
our customers can be more confident than ever in our
ability to deliver these devices despite shortages and price
increases in the memory market.”
The DDR architecture of Alliance Memory’s 2Gb and
4Gb DDR3 and DDR3L SDRAMs allows them to achieve
extremely fast transfer rates of 1600Mbps and clock rates
of 800MHz. With minimal die shrinks, the devices provide
reliable drop-in, pin-for-pin-compatible replacements for
a number of similar solutions used in newer-generation
microprocessors for networking, industrial, medical,
telecom, and consumer applications — eliminating the
need for costly redesigns and part requalification.
The
2Gb
AS4C128M16D3B-12BCN
and
4Gb
AS4C256M16D3B-12BCN DDR3 SDRAMs operate from
a single +1.5V (±0.075V) power supply, while the 4Gb
AS4C256M16D3LB-12BCN DDR3L SDRAM operates
from a single +1.35V power supply. The devices offer a data
mask for write control and are available with a commercial
temperature range of 0°C to +95°C. The 4Gb DDR3L
SDRAM is also available in an industrial temperature range
of -40°C to +95°C.
The 2Gb DDR3 SDRAMs are internally configured as eight
banks of 16M word x 16 bits, while the 4Gb DDR3 and
DDR3L SDRAMs are configured as eight banks of 32M
word x 16 bits. All devices support sequential and interleave
burst types with read or write burst lengths of 4 or 8. An
auto pre-charge function provides a self-timed row pre-
charge initiated at the end of the burst sequence. Easy-to-
use refresh functions include auto- or self-refresh. RoHS-
compliant, the devices are lead (Pb)- and halogen-free.
B die DDR3 and DDR3L SDRAMs are available now, with
lead times of four to eight weeks for production quantities.
Pricing for U.S. delivery starts at $4.95 per piece in
1,000-piece quantities.
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