New-Tech Europe Magazine | August 2016 | Digital edition

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new products
support multiple output rails with improved ripple. They
also work with the ISL9113 sync boost converter and
ISL91133 boost regulator if additional higher voltage
rails are required, and lower voltage rails are supported
with the ISL9104 and ISL9103 sync buck converters.
Pricing and Availability
The ISL91127IR is available now in a 4mm x 4mm,
20-pin QFN package and is priced at $1.29 USD in 1k
quantities. The ISL91127 is also available in a 20-bump,
2.15mm x 1.74mm WLCSP package priced at $1.25.
The ISL91127IRN-EVZ fixed 3.3V evaluation board and
ISL91127IRA-EVZ adjustable voltage evaluation board
are available for purchase. For more information, please
visit
The ISL91128 is available now in a 20-bump, 2.15mm x
1.74mm WLCSP package and is priced at $1.25 USD in
1k quantities. For more information, please visit: http://
Micron Introduces Mobile 3D NAND
Solution for Next-Generation Smartphones
New Micron Mobile 32GB 3D NAND memory technology
delivers better quality, performance and reliability for
next-generation mobile multimedia and streaming
experiences
Micron Technology, Inc., (Nasdaq:MU) today introduced
the company’s first 3D NAND memory technology
optimized for mobile devices and its first products based
on the Universal Flash Storage (UFS) 2.1 standard.
Micron’s initial mobile 3D NAND-based 32GB solution
is targeted specifically for the high and mid-end
smartphone segments which make up approximately 50
percent of worldwide smartphone volume[1]. As mobile
devices bypass personal computers as consumers’
primary computing device, user behaviors heavily impact
the device’s mobile memory and storage requirements.
Micron’s mobile 3D NAND addresses these concerns,
enabling an unparalleled user experience that includes
seamless high definition video streaming, higher
bandwidth gameplay, faster boot up times, camera
performance and file loading.
“Micron continues to advance NAND technology with
our introduction of 3D NAND and UFS products for the
mobile segment,” said Mike Rayfield, vice president
of Micron’s mobile business unit. “The improved
performance, higher capacity and enhanced reliability of
3D NAND will help our customers meet the ever-growing
demand for mobile storage and will enable much more
exciting end user experiences.”
To meet the elevated hardware demands stemming from
increased mobile video and multimedia consumption, as
well as the anticipated increased storage demands that
will result from the introduction of 5G wireless networks,
Micron 3D NAND technology stacks layers of data
storage cells vertically with extraordinary precision to
create storage solutions with three times more capacity
than previous generation planar NAND technologies.
Because capacity is achieved by stacking cells
vertically, Micron is able to pack more storage cells into
a much smaller die area, resulting in the delivery of the
industry’s smallest 3D NAND memory die measuring
only 60.217mm2. A smaller die enables a tiny memory
packaging footprint which can free up space for
additional mobile battery size or enable smaller form
factor devices.
“3D NAND technology will be vital to the continued
development of smartphones and other mobile devices,”
said Greg Wong, founder and principal analyst at
Forward Insights. “With the advent of 5G and mobile’s
increasing influence in our digital lives, smartphone
makers are in need of the most advanced technology to
store and manage the ever-increasing volume of data.
Micron’s 3D NAND for mobile is well suited to address
the market’s evolving data storage needs by enabling
a more seamless user experience for high resolution
video, gaming, and photography.”
3D NAND: Powering the Changing Mobile Landscape
Micron’s first 3D NAND for mobile offers several
competitive technical advantages. New features include:
Industry’s first mobile product built on floating gate
technology, a universally utilized design refined through
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