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new products

introduces a new logic level IR MOSFET™ family. It

comprises three different voltage classes, 60 V, 80 V, and

100 V. The new devices are available in a 2 mm x 2 mm

PQFN package which is perfect for form-factor critical

wireless charging, adapter, and telecom applications. The

small package size enables higher power density and

improved efficiency. At the same time it is saving space,

reducing parts count, and reducing overall system cost.

The new IR MOSFET devices in the PQFN package deliver

between 11 and 40 percent lower RDS(on) than competitive

products. The ultra-low gate charge (Q g) reduces switching

losses without increasing conduction losses. In addition,

the output capacitance (C OSS) and reverse recovery

charge (Q rr) have been optimized, the FOM g (R DS(on) x

Q g/gd) improved. This allows the IR MOSFET devices to

operate at high switching frequencies of up to 6.78 MHz –

as required in resonant wireless charging applications. The

logic level gate drive provides a low gate threshold voltage

(V GS(th)) which means that the MOSFETs can be driven

at 5 V and directly from microcontrollers.

Availability

The IR MOSFET family is available now in 60 V and 80 V,

with a 100 V device in development. Further information is

available at

www.infineon.com/IR-MOSFET-logiclevel.

Next-Generation Automotive Door-Zone

Controllers from STMicroelectronics Bring Power

Management and Failsafe Circuitry On-Chip

STMicroelectronics has advanced the state of the art

in automotive door-zone controllers with a new family of

monolithic devices that integrate power-management and

failsafe circuitry previously implemented using external

devices.

The new L99DZ100G/GP for front-door applications and

L99DZ120 for rear-door controls enable designers to save

space as well as boost reliability and energy efficiency. With

the added advantage of software compatibility between the

family members, they also help simplify development and

accelerate time to market.

ST’s advanced, proprietary BCD8S automotive technology

provides the key to achieving this unique single-chip

solution that meets power-management and failsafe

demands in door-zone applications with features that

include embedded Half-bridge and high-side drivers up to

current ratings of 7.5A. There are also High-Speed CAN

(HS-CAN) and LIN 2.2a (SAE J 2602) interfaces, control

blocks, and protection circuitry. The L99DZ100GP adds

support for ISO 11898-6 HS-CAN selective wake-up that

maximizes energy savings by allowing infrequently-used

Electronic Control Units (ECU) to remain powered down

while connected to the CAN bus.

Both front-door controller variants integrate MOSFET

Half-bridges for driving up to five DC motors and can also

drive an external H-bridge. In addition, there are eight LED

drivers and a further two drivers for bulbs, a gate driver for

a mirror heater, and a control module for electro-chrome

glass. Voltage regulators for external circuitry such as a

microcontroller and sensors, as well as associated timers,

watchdogs, reset generators, and protection are also

provided. The L99DZ120 contains similar features, tailored

to requirements for rear doors, including motor drivers for

electric windows.

Further value-added features include automatic LED

duty-cycle compensation to ensure consistent brightness

as the vehicle supply-voltage (VS) fluctuates. In addition,

innovative thermal clusters allow outputs to be disabled

individually if an event such as a short-circuit occurs. This

enables unaffected outputs to operate normally, ultimately

delivering a superior end-user experience.

The L99DZ100G/GP and L99DZ120 are in production now,

packaged as LQFP64 devices. Please contact your local

ST sales office for pricing and more information.

New-Tech Magazine Europe l 75