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new products
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deployment of IoT devices and
solutions.OurAX-SFultra-lowpower
sub GHz solution gives developers
robust and reliable two-way
connectivity to the SIGFOX global
network,” said Ryan Cameron, Vice
President and General Manager of
the industrial and timing division at
ON Semiconductor. “Meanwhile for
the LAN environment, our industry
leading 802.15.4 platform based on
the NCS36510 now provides users
access to theARMmbed ecosystem
coupled with the benefits of Thread
for security and interoperability.
SIGFOX, in combination with
Thread, also has great potential
for use cases where multiple
connectivity solutions can be mixed
to create new user experiences.
To learn more about ON
Semiconductor’s expertise in IoT
technology you can attend a series
of presentations that company
representatives will be giving at
IoT World (10th – 12th May, Santa
Clara Convention Center, Santa
Clara, CA).
NXP Introduces New High
Performance GaN RF Power
Transistors for Cellular Base
Stations
NXP
Semiconductors
N.V.(NASDAQ:NXPI),
today
announced an expansion to its
portfolioof 48VGalliumNitride (GaN)
RF power transistors optimized
for Doherty power amplifiers for
use in current and next-generation
cellular base stations. The four
new transistors collectively cover
cellular bands from 1805 to 3600
MHz, meeting the needs of wireless
carriers for superior performance at
higher frequencies.
With thewirelessspectrumshortage,
wireless carriers are exploring
higher frequencies to accommodate
the exponential annual increases
in traffic. These networks require
RF power transistors and amplifiers
that deliver higher performance over
wider signal bandwidths, as well as
higher efficiency and ruggedness,
higher output power and smaller
footprints.
The four new NXP GaN transistors
are specifically designed to meet
these challenges. The transistors
have high efficiency and gain,
and are extremely rugged, with
the ability to deliver their rated
performance with an impedance
mismatch (VSWR) greater than
10:1. These transistors, designed
for use in Doherty power amplifiers,
are optimized for seamless
integration with digital predistortion
linearization systems.
The new products introduced today
are:
A2G22S251-01S: Ultra wideband
symmetrical Doherty two device
solution covering 1805 to 2170
MHz (365 MHz bandwidth). In a
symmetric Doherty, it delivers an
average RF output power of 71 W
(450 W peak), gain of 16.5 dB, and
drain efficiency of 46% in concurrent
multiband operation at 8 dB back-
off configured. The part is housed
in a NI-400S-2S air-cavity ceramic
package.
A2G26H281-04S: NXP’s first in-
package Doherty transistor covering
2496 to 2690 MHz, with average RF
output power of 50 W (288 W peak),
gain of 15.3 dB, and drain efficiency
of 57% configured in a NI-780S-4L
air-cavity ceramic package.
A2G35S160-01S and A2G35S200-
01S:
Two-transistor
Doherty
amplifier solution covering 3400 to
3600 MHz with 53 W average RF
output power (331 W peak), gain
of 13.8 dB, and drain efficiency of
46%. Each of these transistors is
housed in a NI-400S-2S air-cavity
ceramic package.
“Cellular customers are actively
pursuing GaN technology especially
in higher frequency bands. Given
its leadership in the cellular base
station market, NXP is committed
to being a dominant source of top-
quality GaN products,” said Paul
Hart, executive vice president and
general manager of NXP’s RF power
business unit. “Our new transistors
fully harness the inherent strengths
of GaN enabling broad bandwidth,
efficient and compact solutions.”