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new products
instrumentation, and healthcare require long product
life cycles, and this new platform will support that while
providing improved performance and ruggedness. In
addition, improved manufacturing will result in shorter
lead times, making product more readily available.”
Samples and production quantities of the enhanced
analog switch products are available now, with lead times
of 10 weeks.
Dialog Semiconductor Enters Gallium
Nitride (GaN) Market with First Integrated
Devices Targeting Fast Charging Power
Adapters
SmartGan™ DA8801 providing monolithic integration of
GaN power FETS together with analog drivers and logic
in an optimized, highly efficient 650V half-bridge design
Dialog Semiconductor plc (XETRA:DLG), a provider of
highly integrated power management, AC/DC power
conversion, solid state lighting (SSL) and Bluetooth®
low energy technology, today announced and is
demonstrating its first gallium nitride (GaN) power
IC product offering, using Taiwan Semiconductor
Manufacturing Corporation’s (TSMCs) 650 Volt GaN-
on-Silicon process technology.
The DA8801 together with Dialog’s patented digital
Rapid Charge™ power conversion controllers will
enable more efficient, smaller, and higher power density
adapters compared to traditional Silicon field-effect
transistor (FET) based designs today. Dialog is initially
targeting the fast charging smartphone and computing
adapter segment with its GaN solutions, where it
already enjoys more than 70 percent market share with
its power conversion controllers.
“The exceptional performance of GaN transistors allows
customers to deliver more efficient and compact power
adapter designs that meet today’s market demands,”
said Mark Tyndall, SVP Corporate Development and
Strategy, Dialog Semiconductor. “Following our success
in BCD-based power management ICs (PMICs), as
an early GaN innovator, Dialog once again leads the
commercialization of a new power technology into high-
volume consumer applications.”
GaN technology offers the world’s fastest transistors,
which are the core of high-frequency and ultra-efficient
power conversion. Dialog’s DA8801 half-bridge
integrates building blocks, such as gate drives and level
shifting circuits, with 650V power switches to deliver an
optimized solution that reduces power losses by up to
50 percent, with up to 94 percent power efficiency. The
product allows for a seamless implementation of GaN,
avoiding complex circuitry, needed to drive discrete
GaN power switches.
The new technology allows a reduction in the size of
power electronics by up to 50 percent, enabling a typical
45 Watt adapter design today to fit into a 25 Watt or
smaller form factor. This reduction in size will enable
true universal chargers for mobile devices.
“As Dialog’s strategic foundry partner for power
management ICs for many years, we are delighted to
have expanded our relationship to collaborate closely in
bringing our GaN process to the mainstream consumer
market for high volume applications,” said Maria
Marced, President of TSMC Europe. “Dialog’s first GaN
product delivers on the promise of GaN while bringing
the integration to a higher level.”
The DA8801 will be available in sample quantities in Q4
2016. More information on the DA8801 can be found
here:
http://www.dialog-semiconductor.com/products/DA8801
68 l New-Tech Magazine Europe