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Efficient use of electrical

power is a goal shared in every

area of electrical engineering

and electronics. Wind and

solar have come to provide a

significant part of our daily

energy needs, placing the

focus on power electronics

components able to switch

hundreds of volts and amps

at a high degree of efficiency

before this green power can

be fed into the grid. We refer

to state-of-the-art power

switches, IGBTs and SiC-

FETs, and how to supply the

respective gate drivers with

voltage in the most effective

possible way.

These semiconductor technologies

are to be found today not only in

wind and solar power inverters, but

across the board in power electronics,

ranging from motor control to welding

equipment, induction furnaces and

vacuum generators to e-mobility and

more.

Developers only had bipolar power

transistors available to them in the

early stages of the power electronics;

these were suitable for reverse

voltages of up to 500V and could

switch currents of 100 amps and more;

this might be a perfectly respectable

level of performance, but it comes at

the cost of very high control currents

- usually ten to twenty percent of

collector current - to keep switching

losses from relatively sharp edges in

limits.

The first power MOSFETs (metal oxide

field effect transistors) to be developed

solved this problem. A MOSFET gate

is insulated by design, only requiring

negligibly small currents to charge

and discharge the gate capacitor. This

development significantly reduced

power losses from gate control.

Obviously, there were still two

sources of loss as known from bipolar

semiconductors:

1. Switching losses from limited edge

steepness during switching cycles

2. ON losses while the semiconductor

is in its ON state

ON losses are intrinsic to the technical

specification of MOSFETs and are

therefore largely fixed; switching

losses on the other hand depend

on control quality, which may be be

improved in the development phase

by suitable circuit designs.

IGBTs combine the

advantages of MOSFETs

and bipolar transistors

The disadvantage of higher ON

losses on the drain-source path

Switching hundreds of volts

and amps without loss

Reinhard Zimmermann, RECOM Power GmbH

56 l New-Tech Magazine Europe