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usually 10kHz to 50kHz for IGBTs and

somewhat more than 50kHz in SiC-

FETs – and steep edges put constant

stress on insulation components in

the system. Voltage peaks can cause

surges that strain the insulation in a

transducer to its limits, especially in

combination with “hidden” parasitic

capacitances and inductances in the

circuit. There is no magic formula

to calculate voltage peak levels and

therefore life expectancy of the system

to any degree of accuracy.

Measuring equipment can only help

to a very limited extent, as even the

relatively small capacitance in a high-

voltage oscilloscope probe will taint

range includes a complete range of

converters designed specifically for

supplying IGBT and SiC-FET drivers.

The converters have asymmetric

outputs at either +15V/-9 V (IGBT) or

+20V/-5V (SiC-FET) at input voltages

of 5V, 12V, 15V and 24V. The power

required also depends on switching

frequency – up to 1W is usually

sufficient for around 10 kHz, whereas

2W is required for 50kHz and more.

These products operate in power-

sharing mode where the rated power

can be distributed across the two

outputs.

Insulation

causes

additional

differences. Products in the RKZ

the result. An voltage spike measured

at 2kV, for example, could well be

double that without exposure to the

probe. There is no final guarantee,

and relying on measurement with a

converter on insulation that is already

tightly dimensioned risks the long-term

reliability of the product. Developers

therefore tend to allow sufficient

safety reserves and use converters

with the best possible insulation in

dimensioning fast power switches.

High-quality DC/DC

converters for IGBT and

FET SiC applications

The RECOM DC/DC converters

Fig. 2: Current/voltage AUC while switching on (diagrams above) and off (below) is a measure of

switching losses. SiC-FETs (top and bottom right) are more efficient than IGBTs by approximately

a factor of four due to the steeper switching edges – at 25°C ambient temperature and taking the

losses from one body diode into account

58 l New-Tech Magazine Europe